1～15 item / All 18 items
Mapping measurements using the u-PCD method are possible, and there are numerous achievements in the solar cell and semiconductor markets.
Various electrical measurement mapping can be performed as an option. (Diffusion length, iron concentration, resistivity, sheet resistance, LBIC, reflectivity, IQE, PN determination)
Lifetime measurement device for single crystal silicon blocks
The lifetime measurement device WT-2000PI uses e-PCD technology to measure minority carrier lifetime in single crystal silicon ingot state without passivation treatment.
The world's only spectroscopic ellipsometer technology for measuring pore rate and pore distribution using an EP (optical porosimeter).
No pre-treatment is required, and measurements can be taken quickly at 20 minutes per point compared to conventional methods.
Thin-film solar cell panel measurement device
In the flat panel display manufacturing market, we have a significant track record in quality control applications.
No need for electrode formation with mercury probes! Provides reduced development time and lower costs in R&D.
The "MCV-530/530L/2200/2500" is a device that enables the evaluation of electrical characteristics of semiconductor silicon wafers and the characteristics of MOS device oxide films, among others. Traditionally, gate electrodes such as Poly-Si or Al were deposited on the wafer, and after forming MOS structures or Schottky structures, CV/IV characteristic evaluations were conducted. This product has its own gate electrode, allowing for the acquisition of electrical characteristics of oxide films and wafers without the need to create a metal gate. It provides quick feedback through process monitoring, reduces development time in R&D, and lowers costs. 【Features】 ■ No need for electrode formation due to the mercury probe ■ Excellent reproducibility ・Schottky: 0.3% (1σ) / MOS: 0.1% (1σ) ■ Mapping of the wafer surface is possible ■ Safe and easy mercury exchange enabled by a newly developed mercury exchange mechanism *For more details, please refer to the PDF document or feel free to contact us.
Trench Depth Measurement Device
Non-contact measurement of deep trenches and TSV shapes of power devices, the depth of DRAM capacitor trenches, CD measurements, and recess measurements. High aspect ratio trench measurements are possible with the proprietary technology MBIR (Model Based Infrared). It also supports the measurement of the vertical profile of the doping concentration of epitaxial films.
Thin film thickness and Young's modulus measurement device
It is possible to measure the thin film thickness, Young's modulus, and Poisson's ratio of a wafer substrate in a non-contact and non-destructive manner.
Effective for analyzing defects and crystal defects! Equipped with interfaces for a wide range of cryostats.
The "DLS-83D/1000" is a measurement device capable of measuring bulk defects and interface states, including temperature, frequency scans, and C-V characteristics. The "DLS-1000" supports high-sensitivity measurements of bulk defects and interface states at the level of 10^8 cm³. It comes standard with a library for easy analysis. It features a unique system that employs a high-sensitivity analog/digital method (analog for measurement and digital for data processing) and is equipped with user-friendly software. 【Features】 ■ Capable of high-sensitivity contamination detection (2x10^8 atoms/cm³) ■ Equipped with a wide range of interfaces for cryostats ■ Capable of measuring temperature, frequency scans, and C-V characteristics ■ Over 100 units delivered worldwide, demonstrating extensive track record *For more details, please refer to the PDF document or feel free to contact us.
Excellent measurement linearity over a wide range! Can be verified on a PC monitor as a three-dimensional graphic map.
The "LEI-1510 series" is a non-contact sheet resistance measurement device manufactured by the former Reihiton company. By attaching a robot, it is possible to quickly measure and process multiple samples. It solves the reproducibility issues caused by probe contact contamination and the contact condition that occur with the four-probe method. It measures sheet resistance non-contact and destructively for Si wafers ranging from 2 inches to a maximum of 8 inches, as well as compound semiconductor (GaAs, GaN, InP, etc.) epi wafers. 【Features】 - Solves reproducibility issues caused by probe contact contamination and contact conditions - Capable of quickly measuring and processing multiple samples - Excellent measurement linearity over a wide range of 0.035 to 3200 ohm/sq. - Measurement data can be viewed as a three-dimensional graphic map on a PC monitor *For more details, please refer to the PDF document or feel free to contact us.
Measurement device that enables the use of IR reflectance measurement heads! Achieves high-throughput measurement of epitaxial film thickness.
The "EIR-2500" is a unique epitaxial film thickness measurement device equipped with an infrared spectroscopic reflectometer and FTIR functionality. It achieves high-throughput epitaxial film thickness measurements and fully complies with applicable SEMI/CE standards. Additionally, the EIR product series is based on high-performance and reliable electronic components, improving equipment uptime and reducing maintenance needs. 【Features】 ■ Wafer size: 4 to 12 inches ■ Materials: Si, SOI, SiC, SiGe, III-V, etc. ■ FTIR functionality ■ High-precision measurement of epitaxial film thickness ■ Measurement of film thickness in the transition region *For more details, please refer to the related link page or feel free to contact us.
Instantly measure the resistance of silicon ingots/blocks non-contact and non-destructively using eddy current technology.
We can also provide devices for mapping measurements of solar cell blocks/wafers/cells.
Crystal Defect Measurement Device (Light Scattering Tomography)
Crystal defects in silicon wafers can be measured quickly.
Measurement device for the development of high-efficiency solar cells
The PV-2000 is a comprehensive measurement device for solar cell development that combines the technologies of Semilab and SDI. It can be equipped with various heads for developing high-efficiency solar cells, such as for passivation layer evaluation.
Fully automatic spreading resistance measurement device
The SRP (Spreading Resistance Profiler) device measures the resistivity profile of silicon in the depth direction, the thickness of the EPI layer, the depth of the PN junction, and the carrier concentration distribution by making contact with two probes on a diagonally polished silicon wafer in the depth direction and measuring the spreading resistance value between the probes.
FastGate Inline CV/IV Measurement Device
It is a device that can be used inline because it does not require electrode formation, does not damage the wafer, and leaves no contamination.
